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| 27-March'98 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit:millimeters (inches) 24 +/- 0.3 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz Low distortion [item -51] IM3=-42dBc(min.) @Po=34.5dBm S.C.L. Thermal Resistance Rth(ch-c)=1.0 deg.C/W(MAX.) (1) 2 R1.2 0.6 +/- 0.15 (2) 1 8 (3) 20.4 +/- 0.2 16.7 APPLICATION item 01 : 6.4-7.2 GHz band power amplifier item 51 : 6.4-7.2 GHz band digital ratio communication 47 2 4 . 2 QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10V ID = 8.0 A RG=25 ohm 1 . GF-38 (Ta=25 deg.C) Ratings -15 -15 30 -60 126 125 175 -65/+175 Unit V V A mA mA W deg.C deg.C . M .. 0 (1) GATE (2) SOURCE(FIANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Tstg Storage temperature *1 : Tc=25 deg.C (Ta=25 deg.C) Test conditions 43 M ELECTRICAL CARACTERISTICS Symbol IDSS Gm Parameter Saturated drain current Transconductance Limits Min. Typ. 20 8.0 45 8 35 -45 Max. -5 1.0 44.5 4 1 . 0 Unit A V V dBm dB % dBc deg.C/W VDS=3V, VGS=0V VDS=3V, ID=6.4A VDS = 3V , ID = 120mA VGS(off) Gate to source cut-off voltage Output power at 1dB gain P1dB compression GLP Linear power gain PAE IM3 Power added efficiency 3rd order IM distortion *1 *2 VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz 7 -42 Rth(ch-c) Thermal resistance Delta Vf method - *1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC 27-March'98 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB ,GLP vs. f 47 OUTPUT POWER P1dB (dBm) VDS=10(V) IDS=8(A) 46 P1dB Po , PAE vs. Pin 12 50 VDS=10(V) IDS=8(A) f=6.8(GHz) 45 OUTPUT POWER Po(dBm) Po 50 11 40 POWER ADDED EFFICIECY PAE (%) 45 10 LINEAR POWER GAIN GLP(dB) 40 30 GLP 44 9 35 PAE 20 43 8 30 10 42 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 FREQUENCY f(GHz) 7 25 20 25 30 35 40 45 0 INPUTPOWER Pin(dBm) Po,IM3 vs.Pin 44 OUTPUT POWER Po (dBm S.C.L.) 40 36 32 28 IM3 VDS=10(V) IDS=8(A) f=7.2(GHz) Delta f=10(MHz) 0 Po -10 -20 -30 -40 -50 -60 -70 IM3 (dBc) 24 20 16 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin (dBm S.C.L.) S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A) f (GHz) 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 Magn. 0.66 0.61 0.56 0.50 0.43 0.35 0.24 0.15 0.01 S11 Angle(deg.) 100 84 70 57 42 27 12 1 -10 Magn. 2.39 2.43 2.47 2.54 2.59 2.66 2.73 2.75 2.72 S Parameters (TYP.) S21 Angle(deg.) Magn. -106 0.057 -122 0.065 -138 0.071 -154 0.079 -170 0.088 173 0.095 155 0.101 143 0.105 123 0.109 S12 Angle(deg.) -171 174 160 145 131 116 100 88 70 S22 Angle(deg.) 74 64 52 40 27 12 -8 -27 -61 Magn. 0.32 0.34 0.35 0.35 0.34 0.31 0.27 0.24 0.20 MITSUBISHI ELECTRIC |
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